Lifetime reliability-aware design of integrated circuits / Mohsen Raji, Behnam Ghavami.

Автори: Raji, Mohsen

Тип публікації: Book

Предметні терміни: Integrated circuits -- Design, Integrated circuits -- Reliability

Інші автори: Ghavami, Behnam

Онлайн доступ: https://holycross.idm.oclc.org/login?auth=cas&url=https://link.springer.com/10.1007/978-3-031-15345-7

Design for testability, debug and reliability : next generation measures using formal techniques / Sebastian Huhn, Rolf Drechsler.

Автори: Huhn, Sebastian

Тип публікації: Book; eBook

Предметні терміни: Integrated circuits -- Design and construction, Integrated circuits -- Testing, Debugging in computer science, Integrated circuits -- Reliability, Systems Architecture, COMPUTERS, Circuits, Electronics, TECHNOLOGY & ENGINEERING, Electronic books

Інші автори: Drechsler, Rolf

Онлайн доступ: https://holycross.idm.oclc.org/login?auth=cas&url=https://link.springer.com/10.1007/978-3-030-69209-4

ESD : Failure Mechanisms and Models.

Автори: Voldman, Dr. Steven H.

Тип публікації: Book

Предметні терміни: Semiconductors -- Failures, Integrated circuits -- Protection, Integrated circuits -- Testing, Integrated circuits -- Reliability, Electric discharges, Electrostatics, Electric action of points

Онлайн доступ: https://ebookcentral.proquest.com/lib/holycrosscollege-ebooks/detail.action?docID=454456

Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

Автори: Griffoni, A., Gerardin, S., Cester, A., Paccagnella, A., Simoen, E., Claeys, C.

Джерело: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 54(6):2257-2263 Dec, 2007

Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation

Автори: Cester, A., Gerardin, S., Paccagnella, A., Simoen, E., Claeys, C.

Джерело: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 52(6):2252-2258 Dec, 2005

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Reliability physics.
Annual International Symposium on Reliability Physics
Reliability Physics Symposium Proceedings, ... Annual ... IEEE International
Annual proceedings.

Автори: International Reliability Physics Symposium., Institute of Electrical and Electronics Engineers. Electron Devices Group., IEEE Reliability Society., IEEE Reliability Group., IEEE Electron Devices Society.

Relation: Also issued online.; Annual proceedings, reliability physics

Доступ через URL: http://hdl.handle.net/2027/mdp.39015030241445

Доступність: http://hdl.handle.net/2027/mdp.39015058300388